Detecting sudden changes in acceleration in semiconductor device or semiconductor packaging containing semiconductor device

ABSTRACT

An approach for detecting sudden changes in acceleration in a semiconductor device or semiconductor package containing the semiconductor device is disclosed. In one embodiment, a piezoelectric sensor is embedded in a semiconductor die. The piezoelectric sensor is configured to sense a mechanical force applied to the semiconductor die. An excessive force indicator is coupled to the piezoelectric sensor. The excessive force indicator is configured to generate an excessive force indication in response to the piezoelectric sensor sensing that the mechanical force applied to the semiconductor die has exceeded a predetermined threshold indicative of an excessive mechanical force.

BACKGROUND

Embodiments of the present invention relate generally to semiconductordevice fabrication, and more specifically, to detecting an excessiveforce experienced by an integrated circuit or semiconductor die, or asemiconductor package containing the die that is due to sudden changesin acceleration.

Physical damage caused by dropping electronic products is generally aconcern for electronic products manufacturers. For example, portableelectronic devices, which can perform a variety of functions includingtelephonic, electronic messaging and managing personal information, canbe accidentally dropped and consequently damaged. Users of these damagedelectronic devices can submit warranty claims to the manufacturers ofthe devices. It is difficult for the manufacturers to ascertain whetherthe damaged devices that are received are the result of damage caused bythe users or are due to certain components in the devices such assemiconductor dies or their semiconductor packages failing. Inparticular, it is a challenge for electronic product manufacturers todifferentiate whether an electronic device received under a warrantyclaim was built weaker than the normal population, or whether the deviceexperienced more extreme conditions than it was designed to withstand(e.g., dropped from an excessive height). Since the process ofascertaining whether a damaged electronic device received under awarranty claim is due to a manufacturing issue or improper handling canbe difficult or impossible, some electronic manufacturers willneedlessly cover repair or replacement of the device under its warranty.

SUMMARY

In one embodiment, a semiconductor device is provided. In thisembodiment, the semiconductor device comprises a semiconductor die and apiezoelectric sensor embedded in the semiconductor die. Thepiezoelectric sensor is configured to sense a mechanical force appliedto the semiconductor die. The semiconductor device further comprises anexcessive force indicator coupled to the piezoelectric sensor. Theexcessive force indicator is configured to generate an excessive forceindication in response to the piezoelectric sensor sensing that themechanical force applied to the semiconductor die has exceeded apredetermined threshold indicative of an excessive mechanical force.

In a second embodiment, a packaged semiconductor device is provided. Inthis embodiment, the packaged semiconductor device comprises asemiconductor chip package substrate and a semiconductor die connectedto the semiconductor chip package substrate. The packaged semiconductordevice further comprises a piezoelectric sensor embedded in thesemiconductor die or the semiconductor chip package substrate to sense amechanical force applied thereto. The packaged semiconductor device alsocomprises an excessive force indicator coupled to the piezoelectricsensor. The excessive force indicator is configured to generate anexcessive force indication in response to the piezoelectric sensorsensing that the mechanical force exceeds a predetermined thresholdindicative of an excessive mechanical force.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of a packaged semiconductor devicein which embodiments of the present invention may be utilized;

FIG. 2 shows a schematic diagram of a semiconductor device that can beused with the package semiconductor device depicted in FIG. 1 to detectan excessive force due to sudden changes in acceleration experienced bya semiconductor die in the package semiconductor device or the packagesemiconductor device itself according to a first embodiment of thepresent invention;

FIG. 3 shows a schematic diagram of a semiconductor device that can beused with the package semiconductor device depicted in FIG. 1 to detectan excessive force due to sudden changes in acceleration experienced bya semiconductor die in the package semiconductor device or the packagesemiconductor device itself according to a second embodiment of thepresent invention;

FIG. 4 is a schematic illustrating how a semiconductor device like theone depicted in FIG. 2 can be used in an electronic device to ascertainwhether the electronic device experienced an excessive force due tosudden changes in acceleration according to one embodiment of thepresent invention; and

FIG. 5 is a schematic illustrating how a semiconductor device like theone depicted in FIG. 3 can be used in a semiconductor package toindicate the presence of an excessive force due to sudden changes inacceleration according to one embodiment of the present invention.

DETAILED DESCRIPTION

FIG. 1 shows a cross-sectional view of a packaged semiconductor device100 in which embodiments of the present invention may be utilized.Packaged semiconductor device 100 includes a semiconductor chip packagesubstrate 120 and a semiconductor die 140 having solder bumps (e.g.,controlled collapse chip connection (C4) contacts) 160 attached to asurface of the die that connect to respective bond pads (not shown)disposed on a surface of semiconductor chip package substrate 120 toform a metallurgical joint. Solder bumps 160 may be any solderablematerial that can include, but is not limited to, material having tinand lead, tin without lead, tin with a residual of copper or silver, tinbismuth, tin indium, etc. Packaged semiconductor device 100 is only anexample of one type of packaged semiconductor device in which thevarious embodiments of the present invention may be utilized and is notmeant to be limiting. Those skilled in the art will appreciate thatother interconnect technologies can be used to package semiconductordevices, all of which are suitable for use with the embodiments of thepresent invention. For example, wire-bond assembly and thermalcompression bonding are other interconnect technologies that can be usedto generate a packaged semiconductor device in addition to the oneillustrated in FIG. 1 which involves a flip-chip assembly.

In the instance in which a damaged electronic device is returned by auser under a warranty claim, the manufacturer may notice that packagedsemiconductor devices in the damaged electronic device similar to theone depicted in FIG. 1 may be defective (e.g., a cracked silicon orbroken soldered joint). The manufacturer of the electronic device aswell as the manufacturer of the packaged semiconductor devices may findit difficult if not impossible to ascertain whether the damagedelectronic device was mishandled by the party submitting the warrantyclaim, or if the defect occurred during the manufacturing process of thepackaged semiconductor devices or the electronic device itself.

Embodiments of the present invention are directed to assistingelectronic device manufacturers and semiconductor manufacturers thatprovide semiconductor packages for use in electronic devicesmanufactured by the electronic device manufacturers determine the rootcause of damaged devices returned on warranty claims. In particular, thevarious embodiments of the present invention include using anaccelerometer that contains piezoelectric material and an excessiveforce indicator to detect whether an electronic device experienced anexcessive force due to sudden changes in acceleration. In operation, theaccelerometer with piezoelectric material transforms mechanical energythat is produced when the electronic device is dropped into electricalenergy. This electrical energy is then used to create a detectablesignal or change within the device that is correlated by the excessiveforce indicator to determine whether the mechanical force due to thesudden changes in acceleration is excessive enough to classify asmishandling.

The use of an accelerometer that contains piezoelectric materialobviates the need to use an external power source to power on theaccelerometer such as in the case with conventional accelerometers usedin electronic devices. In addition, these types of conventionalaccelerometers may not stay part of the electronic devices for theirfunctional lives. Furthermore, these conventional accelerometers aretypically an external component of the electronic devices which can beproblematic from an assembly point of view.

In the various embodiments of the present invention, the accelerometerwith piezoelectric material and the excessive force indicator can beincorporated into semiconductor die 140 or on packaged semiconductordevice 100. This facilitates an actual determination as to whetherdamaged electronic devices have been caused by improper handling,shipping or assembly. For example, if packaged semiconductor device 100had a defect, then the accelerometer with the piezoelectric material andthe excessive force indicator in the various embodiments of the presentinvention could assist manufacturers in determining whether packagedsemiconductor device 100 was dropped, or if the defect was caused duringthe semiconductor packaging process. This would enable manufacturers todetermine the root cause of the damage in a more efficient manner. Inthe case of consumer electronic products, such as cellular telephones,that have been dropped from a height that they were not designed towithstand, the various embodiments of the present invention would enablemanufacturers to definitively determine “mishandling” as a root causefor the damage. As a result, this would allow manufacturers to savemoney on paying out warranty claims that are not due to actions of themanufacturers.

FIG. 2 shows a schematic diagram of a semiconductor device 200 that canbe used with a package semiconductor device like the one depicted inFIG. 1 to detect an excessive force due to sudden changes inacceleration experienced by a semiconductor die or the packagesemiconductor device itself. As shown in FIG. 2, semiconductor device200 comprises a semiconductor die 205 and a piezoelectric sensor 210embedded in the semiconductor die to sense a mechanical force applied tothe semiconductor die. In one embodiment, piezoelectric sensor 210 canbe integrated in an accelerometer that measures dynamic changes inmechanical variables, such as for example acceleration, vibration andmechanical shock. For example, piezoelectric sensor 210 can measuremechanical forces experienced by semiconductor die 205 that are due tosudden changes in acceleration.

The exploded view of FIG. 2 on the right-hand side of the figure shows amore detailed view of piezoelectric sensor 210 within semiconductor die205. As shown in this exploded view portion of FIG. 2, piezoelectricsensor 210 includes a piezoelectric material 215. Piezoelectric material215 can be any material that can convert mechanical energy to electricalenergy and vice versa. In addition, the piezoelectric material should besuited for detecting sudden changes in acceleration. Illustrative, butnon-limiting examples of piezoelectric material that can be used inpiezoelectric sensor 210 include lead zirconium titanate, bariumtitanate, lead magnesium niobate-lead titanate, etc.

Piezoelectric material 215 can be embedded in semiconductor die 205 in avariety of locations. For example, a single piece of piezoelectricmaterial can be oriented in a one particular location withinsemiconductor die 205. In another embodiment, piezoelectric material 215can be oriented in each axis of semiconductor die 205 to form a circuit.In this manner, the piezoelectric material 215 that is oriented in eachaxis of semiconductor die 205 can each generate an electrical output inresponse to mechanical energy. Thus, if semiconductor die 205 wasdropped from a height that it was not designed to withstand, then thesum of electrical outputs from each piece of piezoelectric materialwould be enough to indicate an excessive force due to sudden changes inacceleration. For example, if the sum of outputs exceeds a predeterminedthreshold, then it could cause a fuse to blow to indicate that anexcessive force was experienced.

Those skilled in the art will appreciate that the amount and location ofpiezoelectric material that is used will depend on the end product thatthe semiconductor package is used and the amount of space needed for thepiezoelectric material to deform in response to mechanical energy.Furthermore, those skilled in the art will also appreciate that theamount and location of piezoelectric material that is used can depend onhow the piezoelectric material is tuned. The tunability of piezoelectricmaterial to attain a specific output is generally based on the size ofthe material, the plane or directionality that it is used, the type ofthe material and the construction of the material.

The exploded view portion on the right-hand side of FIG. 2 further showsan excessive force indicator 220 coupled to piezoelectric material 215of piezoelectric sensor 210. Excessive force indicator 220 can beconfigured to generate an excessive force indication in response topiezoelectric material 215 of piezoelectric sensor 210 sensing that amechanical force applied to semiconductor die 205 has exceeded apredetermined threshold indicative of an excessive mechanical force.Those skilled in the art will appreciate that values selected as thepredetermined threshold will depend on the end product that the packagesemiconductor device including piezoelectric sensor 210 and excessiveforce indicator 220 are used with and the application of the product.

In one embodiment, an excessive force indicator 220 can generate theexcessive force indication in the form of an electrical indication. Inthis embodiment, excessive force indicator 220 can comprise a circuit insemiconductor die 205. For example, as shown in FIG. 2, excessive forceindicator 220 can include a fuse configured to blow in response topiezoelectric material 215 of piezoelectric sensor 210 detecting thatelectrical energy corresponding to the mechanical force experienced bysemiconductor die 205 exceeds the predetermined threshold. In thismanner, the circuit would be in an open state when the mechanical forceexceeds the predetermined threshold and in a closed state when themechanical force is below the predetermined threshold.

In another embodiment, excessive force indicator 220 can include a bankof fuses each configured to blow in response to the piezoelectric sensordetecting that electrical energy corresponding to the mechanical forceexceeds the predetermined threshold. In this embodiment, each of thefuses can be configured to blow at a different electrical energy. Inthis manner, when the electrical device or end product that includes apackage semiconductor device including piezoelectric sensor 210 andexcessive force indicator 220 is dropped or mishandled in some fashion,then the particular fuse in the bank that is blown will provide anindication of the mechanical force that was experienced due to a suddenchange in acceleration. As a result, manufacturers of the damaged endproduct can use that particular mechanical force to focus in on apossible root cause for the damage. Those skilled in the art willappreciate that this embodiment can be enabled because piezoelectricmaterial 215 can be tuned in such a way that different parts of thematerial can each generate a different output depending on the input. Inthis manner, each output generated from the various tuned parts of thematerial can be compared to a specific threshold designated for thatpart of the piezoelectric material. If the electrical output generatedfrom a specific part of the material exceeds its threshold, then itscorresponding fuse will be blow.

FIG. 3 shows a schematic diagram of a semiconductor device 300 that canbe used with a package semiconductor device like the one depicted inFIG. 1 to detect an excessive force due to sudden changes inacceleration experienced by a semiconductor die or the packagesemiconductor device itself. As shown in FIG. 3, semiconductor device300 comprises a semiconductor die 205 and a piezoelectric sensor 210embedded in the semiconductor die to sense a mechanical force applied tothe semiconductor die. In this embodiment, piezoelectric sensor 210 cantake the form of a piezoelectric-based accelerometer that measuresdynamic changes in mechanical variables such as for exampleacceleration, vibration and mechanical shock. For example, piezoelectricsensor 210 can measure mechanical forces experienced by semiconductordie 205 that are due to sudden changes in acceleration.

The exploded view on the left-hand side of FIG. 3 shows a more detailedview of piezoelectric sensor 210 within semiconductor die 205. As shownin this exploded view portion of FIG. 3, piezoelectric sensor 210includes piezoelectric material 215. The exploded view on the left-handside portion of FIG. 3 further shows a meter 305 coupled topiezoelectric material 215. Meter 305 can be a voltage meter thatgenerates a voltage value that is proportional to the changes inacceleration detected by piezoelectric material 215. Each of thesevoltage values will correspond to a certain mechanical force. Themechanical forces and corresponding voltage values that are greater thana predetermined threshold are indicative of excessive mechanical forces.

The right-hand side of FIG. 3 shows that semiconductor device 300comprises a visual excessive force indicator 310 that can generate anexcessive force indication in response to piezoelectric material 215 ofpiezoelectric sensor 210 sensing that a mechanical force applied tosemiconductor die 210 has exceeded a predetermined threshold indicativeof an excessive mechanical force. In one embodiment, visual excessiveforce indicator 310 can comprise a color change material that isconfigured to change color in response to piezoelectric material 215 ofpiezoelectric sensor 210 detecting that the electrical energycorresponding to the mechanical force exceeds the predeterminedthreshold. The color change material can change color as a function ofan electric field generated from piezoelectric material 215 ofpiezoelectric sensor 210, and a distance that separates the color changematerial and the piezoelectric sensor. The color change material can beany material whose color can change as a result of electrochemicalreactions initiated by the electrical energy generated from apiezoelectric material responding to mechanical energy. Illustrative,but non-limiting examples of color change material that can be used asvisual excessive force indicator 310 include but are not limited to, anyelectrochromistic material that reversibly or irreversibly changes colorwhen exposed to an electric field. In one embodiment, the visualexcessive force indicator 310 is one or more of the followingelectrochromistic materials: a PProDOT (i.e.,3,4-propylenedioxythiophene), a PProDOP (i.e.,3,4-propylenedioxypyrrole), a polyaniline, a viologen, apolyoxotungstate, tungsten oxide (WO3), chiral nematic liquid crystals,monomeric molecules and oligomeric molecules. Other electrochromisticmaterials may be used within the scope of this embodiment. For example,one or more electrochromistic materials may be selected based on thedesired sensitivity level(s) of an object or structure.

FIG. 4 is a schematic representation of the semiconductor device 200depicted in FIG. 2 in use with an electronic device to ascertain whetherthe electronic device experienced an excessive force due to suddenchanges in acceleration. In FIG. 4, a semiconductor package containingsemiconductor die 205 and piezoelectric sensor 210 includingpiezoelectric material 215 and excessive force indicator 220 is in usewith a cellular phone 400. Piezoelectric sensor 210 includingpiezoelectric material 215 and excessive force indicator 220 is notlimited to placement on semiconductor die 205 and can be placed on thesemiconductor package. Furthermore, those skilled in the art willrecognize that the various embodiments of the present invention are notlimited to use with cellular phones. Instead, the various embodiments ofthe present invention are suited for use with any electronic devices orelectrical devices that contain semiconductor packages and that arepotentially subject to damage through actions that are difficult todefinitively recognize.

In FIG. 4, a damaged or an improperly operating phone 400 can be coupledto an electronic testing system 405 programmed to electronically analyzepiezoelectric sensor 210 including piezoelectric material 215 andexcessive force indicator 220. In one embodiment, electronic testingsystem 405 can determine if excessive force indicator 220 indicates thatthe predetermined threshold has been exceeded. For example, if excessiveforce indicator 220 includes a fuse, then electronic testing system 405would electrically determine if the fuse has blown. If electronictesting system 405 ascertains that the fuse has blown, then that is anindication that cellular phone 400 experienced a mechanical force due toa sudden change in acceleration that is not consistent with normal useof the phone. On the other hand, if electronic testing system 405ascertains that the fuse is still intact, then this is an indicationthat the phone may not have been damaged by improper use or mishandlingof phone 400. In this case, the manufacturer of phone 400 may have tolook into other causes for the damage such as faulty components orimproper assembly. Although FIG. 4 shows phone 400 electricallyconnected to electronic testing system 405, those skilled in the artwill appreciate that other approaches exist. For example, thesemiconductor package containing piezoelectric sensor 210 includingpiezoelectric material 215 and excessive force indicator 220 can beremoved from phone 400 and connected directly with electronic testingsystem 405 for analysis thereof.

FIG. 5 is a schematic representation of an example in which thesemiconductor device 300 depicted in FIG. 3 could visually indicate thatit had experienced an excessive force due to sudden changes inacceleration. In FIG. 5, a semiconductor package 500 containingsemiconductor die 205 and piezoelectric sensor 210 includingpiezoelectric material 215 and excessive force indicator 310 (shown inFIG. 3) is located on a table 505. Piezoelectric sensor 210 includingpiezoelectric material 215 and excessive force indicator 310 is notlimited to placement on the semiconductor die and can be placed on thesemiconductor package. Furthermore, those skilled in the art willrecognize that the example illustrated in FIG. 5 is only one example inwhich the semiconductor device 300 can be used to visually indicate theinstance of experiencing an excessive force and is not meant to belimiting.

In the example illustrated in FIG. 5, semiconductor package 500 fallsfrom table 505. The color of semiconductor package 500 on top of table505 would have a color different to the color of the package uponfalling from the table and striking the ground. In this example, themechanical force that semiconductor package 500 experiences as a resultof the changes in acceleration from falling off table 505 and strikingthe ground is excessive enough for the piezoelectric material 215 insemiconductor package 500 to determine that the predetermined thresholdhas been exceeded, causing activation of the color change material.

While the disclosure has been particularly shown and described inconjunction with a preferred embodiment thereof, it will be appreciatedthat variations and modifications will occur to those skilled in theart. Therefore, it is to be understood that the appended claims areintended to cover all such modifications and changes as fall within thetrue spirit of the disclosure.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor die; a piezoelectric sensor embedded in the semiconductordie, the piezoelectric sensor configured to sense a mechanical forceapplied to the semiconductor die; and an excessive force indicatorcoupled to the piezoelectric sensor, the excessive force indicatorconfigured to generate an excessive force indication in response to thepiezoelectric sensor sensing that the mechanical force applied to thesemiconductor die has exceeded a predetermined threshold indicative ofan excessive mechanical force, the mechanical force due to dynamicchanges in at least one of: acceleration, vibration, and mechanicalshock, wherein the excessive force indicator comprises anelectrochromistic material configured to change color in response to thepiezoelectric sensor detecting that electrical energy corresponding tothe mechanical force exceeds the predetermined threshold and a fuseconfigured to blow in response to the piezoelectric sensor detectingthat electrical energy corresponding to the mechanical force exceeds thepredetermined threshold, and wherein the semiconductor device is coupledto an electronic testing system, the electronic testing systemconfigured to determine whether the excessive force indication indicatesthat the predetermined threshold has been exceeded.
 2. The semiconductordevice according to claim 1, wherein the excessive force indicatorgenerates an electrical indication.
 3. The semiconductor deviceaccording to claim 1, wherein the fuse comprises a plurality of fuseseach configured to blow in response to the piezoelectric sensordetecting that electrical energy corresponding to the mechanical forceexceeds the predetermined threshold, wherein each of the plurality offuses is configured to blow at a different electrical energy.
 4. Thesemiconductor device according to claim 1, wherein the excessive forceindicator comprises a circuit in the semiconductor die.
 5. Thesemiconductor device according to claim 4, wherein the circuit comprisesthe fuse configured to blow in response to the piezoelectric sensordetecting that electrical energy corresponding to the mechanical forceexceeds the predetermined threshold, the circuit in an open state inresponse to the mechanical force exceeding the predetermined thresholdand in a closed state in response to the mechanical force being belowthe predetermined threshold.
 6. The semiconductor device according toclaim 1, wherein the excessive force indicator generates a visualindication.
 7. The semiconductor device according to claim 1, whereinthe color change material changes color as a function of an electricfield generated from the piezoelectric sensor and a distance separatingthe color change material and the piezoelectric sensor.
 8. Thesemiconductor device according to claim 1, wherein the piezoelectricsensor is integrated in an accelerometer, the piezoelectric sensorconfigured to detect sudden changes in acceleration experienced by thesemiconductor die.
 9. A packaged semiconductor device, comprising: asemiconductor chip package substrate; a semiconductor die connected tothe semiconductor chip package substrate; a piezoelectric sensorembedded in the semiconductor die or the semiconductor chip packagesubstrate to sense a mechanical force applied thereto; and an excessiveforce indicator coupled to the piezoelectric sensor, the excessive forceindicator configured to generate an excessive force indication inresponse to the piezoelectric sensor sensing that the mechanical forceexceeds a predetermined threshold indicative of an excessive mechanicalforce, the mechanical force due to dynamic changes in at least one of:acceleration, vibration, and mechanical shock, wherein the excessiveforce indicator comprises an electrochromistic material configured tochange color in response to the piezoelectric sensor detecting thatelectrical energy corresponding to the mechanical force exceeds thepredetermined threshold and a fuse configured to blow in response to thepiezoelectric sensor detecting that electrical energy corresponding tothe mechanical force exceeds the predetermined threshold, and whereinthe packaged semiconductor device is coupled to an electronic testingsystem, the electronic testing system configured to determine whetherthe excessive force indication indicates that the predeterminedthreshold has been exceeded.
 10. The packaged semiconductor deviceaccording to claim 9, wherein the excessive force indicator generates anelectrical indication.
 11. The packaged semiconductor device accordingto claim 9, wherein the fuse indicator fuse comprises a plurality offuses each configured to blow in response to the piezoelectric sensordetecting that electrical energy corresponding to the mechanical forceexceeds the predetermined threshold, wherein each of the plurality offuses is configured to blow at a different electrical energy.
 12. Thepackaged semiconductor device according to claim 10, wherein theexcessive force indicator comprises a circuit having the fuse in thesemiconductor die that is configured to blow in response to thepiezoelectric sensor detecting that electrical energy corresponding tothe mechanical force exceeds the predetermined threshold.
 13. Thepackaged semiconductor device according to claim 12, wherein the circuitis in an open state in response to the mechanical force exceeding thepredetermined threshold and in a closed state in response to themechanical force being below the predetermined threshold.
 14. Thepackaged semiconductor device according to claim 9, wherein theexcessive force indicator generates a visual indication.
 15. Thepackaged semiconductor device according to claim 9, wherein, the colorchange material changes color as a function of an electric fieldgenerated from the piezoelectric sensor and a distance separating thecolor change material and the piezoelectric sensor.
 16. The packagedsemiconductor device according to claim 9, wherein the piezoelectricsensor is integrated in an accelerometer, the piezoelectric sensorconfigured to detect sudden changes in acceleration experienced by thesemiconductor die.
 17. The semiconductor device according to claim 1,wherein the electrochromistic material includes at least one of:3,4-propylenedioxythiphene, 3,4-propylenedioxypyrrole, a polyaniline, aviologen, a polyoxotungstate, tungsten oxide, chiral nematic liquidcrystals, monomeric molecules or oligomeric molecules.
 18. The packagedsemiconductor device according to claim 9, wherein the electrochromisticmaterial includes at least one of: 3,4-propylenedioxythiphene,3,4-propylenedioxypyrrole, a polyaniline, a viologen, apolyoxotungstate, tungsten oxide, chiral nematic liquid crystals,monomeric molecules or oligomeric molecules.
 19. The semiconductordevice according to claim 1, wherein the excessive force indicatorindicates misuse or mishandling of the semiconductor device in responseto the piezoelectric sensor detecting that electrical energycorresponding to the mechanical force exceeds the predeterminedthreshold.
 20. The packaged semiconductor device according to claim 9,wherein the excessive force indicator indicates misuse or mishandling ofthe packaged semiconductor device in response to the piezoelectricsensor detecting that electrical energy corresponding to the mechanicalforce exceeds the predetermined threshold.